E. Ohue

A 0.2-μm 180-GHz-f/sub max/ 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

Katsuyoshi Washio, E. Ohue, H. Shimamoto et al. · IEEE Transactions on Electron Devices · 2002 · 83 citations

Engineering, Electrical Engineering, Microelectronics +16

130-GHz f/sub T/ SiGe HBT technology

Katsuya Oda, E. Ohue, M. Tanabe et al. · 2002 · 66 citations

Engineering, Electrical Engineering, Materials Science +17

A selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay

Katsuyoshi Washio, E. Ohue, Katsuya Oda et al. · 2002 · 43 citations

Engineering, Electrical Engineering, Microelectronics +11

82 GHz dynamic frequency divider in 5.5 ps ECL SiGe HBTs

Katsuyoshi Washio, E. Ohue, Katsuya Oda et al. · 2002 · 38 citations

Engineering, Electrical Engineering, Microelectronics +16

Design of a 32.7-GHz bandwidth AGC amplifier IC with wide dynamic range implemented in SiGe HBT

Kenichi Ohhata, Takatsugu Masuda, E. Ohue et al. · IEEE Journal of Solid-State Circuits · 1999 · 34 citations

Engineering, Electrical Engineering, Microelectronics +16