82 GHz dynamic frequency divider in 5.5 ps ECL SiGe HBTs

Abstract

A dynamic frequency divider with 82.4 GHz maximum operating frequency, the fastest reported in any semiconductor technology, and a static frequency divider with 60 GHz maximum operating frequency, the fastest reported in Si, are intended for future millimeter-wave systems. These frequency dividers are fabricated in self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistors (HBTs). These SiGe HBTs provide a 122 GHz cutoff frequency, a 163 GHz maximum oscillation frequency, and 5.5 ps ECL gate delay, the fastest reported in Si.