Katsuyoshi Washio - Concepedia

Author

Katsuyoshi Washio

Hitachi (Japan)

Also Known As

K. WASHIO, K. Washio, KATSUYOSHI WASHIO, Katsuyoshi Washio, Kenji Washio, Kono Washio

258

Publications

1.8K

Citations

H-Index

Concepts

All Affiliations

Hitachi (Japan)Hitachi (United Kingdom)Tohoku University Renesas Electronics (Japan)

About

Katsuyoshi Washio is an author at Hitachi (Japan) specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	57	1.4K
2	Applied Physics	17	30	753
3	Computer Engineering	11	12	263
4	Chemical Engineering	1	1	15
5	Chemistry	1	1	27

Katsuyoshi Washio

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
A 0.2-μm 180-GHz-f/sub max/ 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications Katsuyoshi Washio, E. Ohue, H. Shimamoto, IEEE Transactions on Electron Devices EngineeringRadio FrequencyIntegrated CircuitsSemiconductor DeviceRf Semiconductor	2002	83
SiGe HBT and BiCMOS technologies for optical transmission and wireless communication systems Katsuyoshi Washio IEEE Transactions on Electron Devices Optical MaterialsSelective Epitaxial GrowthEngineeringOptical Transmission SystemOptical Wireless Communication	2003	79
Performance enhancement of strained-Si MOSFETs fabricated on a chemical-mechanical-polished SiGe substrate Nobuyuki Sugii, Digh Hisamoto, Katsuyoshi Washio, IEEE Transactions on Electron Devices EngineeringSilicon On InsulatorSemiconductor DeviceStrained-si MosfetsWafer Scale Processing	2002	66
130-GHz f/sub T/ SiGe HBT technology Katsuya Oda, E. Ohue, M. Tanabe, Electrical EngineeringRecord Cutoff FrequencyEngineeringRf SemiconductorHigh-frequency Device	2002	65
A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25- μm SiGe BiCMOS technology Nobuhiro Shiramizu, Takatsugu Masuda, M. Tanabe, Electrical EngineeringEngineeringRf SemiconductorFaithful Signal AmplificationLow-power Amplifier	2005	48
A selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay Katsuyoshi Washio, E. Ohue, Katsuya Oda, Electrical EngineeringEngineeringRf SemiconductorSige-base StructureNanoelectronics	2002	43
82 GHz dynamic frequency divider in 5.5 ps ECL SiGe HBTs Katsuyoshi Washio, E. Ohue, Katsuya Oda, Semiconductor TechnologyElectrical EngineeringDynamic Frequency DividerEngineeringRadio Frequency	2002	38
Design of a 32.7-GHz bandwidth AGC amplifier IC with wide dynamic range implemented in SiGe HBT Kenichi Ohhata, Takatsugu Masuda, E. Ohue, IEEE Journal of Solid-State Circuits 32.7-Ghz Bandwidth AgcElectrical EngineeringSige HbtEngineeringRf Semiconductor	1999	34
67-GHz static frequency divider using 0.2-μm self-aligned SiGe HBTs Katsuyoshi Washio, R. Hayami, E. Ohue, IEEE Transactions on Microwave Theory and Techniques Power ConsumptionElectrical EngineeringMillimeter Wave TechnologyEngineeringVlsi Design	2001	34
A wide-dynamic-range, high-transimpedance Si bipolar preamplifier IC for 10-Gb/s optical fiber links Kenichi Ohhata, Takatsugu Masuda, Kazuo Imai, IEEE Journal of Solid-State Circuits PhotonicsOptical MaterialsEngineeringOptical AmplificationOptical Transmission System	1999	33

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