Katsuyoshi Washio

A 0.2-μm 180-GHz-f/sub max/ 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

Katsuyoshi Washio, E. Ohue, H. Shimamoto et al. · IEEE Transactions on Electron Devices · 2002 · 83 citations

Engineering, Radio Frequency, Integrated Circuits +16

SiGe HBT and BiCMOS technologies for optical transmission and wireless communication systems

Katsuyoshi Washio · IEEE Transactions on Electron Devices · 2003 · 79 citations

Optical Materials, Selective Epitaxial Growth, Engineering +18

Performance enhancement of strained-Si MOSFETs fabricated on a chemical-mechanical-polished SiGe substrate

Nobuyuki Sugii, Digh Hisamoto, Katsuyoshi Washio et al. · IEEE Transactions on Electron Devices · 2002 · 66 citations

Engineering, Silicon On Insulator, Semiconductor Device +16

130-GHz f/sub T/ SiGe HBT technology

Katsuya Oda, E. Ohue, M. Tanabe et al. · 2002 · 65 citations

Electrical Engineering, Record Cutoff Frequency, Engineering +13

A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25- μm SiGe BiCMOS technology

Nobuhiro Shiramizu, Takatsugu Masuda, M. Tanabe et al. · 2005 · 48 citations

Electrical Engineering, Engineering, Rf Semiconductor +12