Publication | Closed Access
130-GHz f/sub T/ SiGe HBT technology
65
Citations
6
References
2002
Year
Unknown Venue
Electrical EngineeringRecord Cutoff FrequencyEngineeringRf SemiconductorHigh-frequency DeviceUniform Ge ProfilesElectronic EngineeringAntennaApplied PhysicsReal Emitter/base HeterojunctionComputational ElectromagneticsMicroelectronicsMicrowave EngineeringOptoelectronicsElectromagnetic CompatibilityElectronic Circuit
A real emitter/base heterojunction was formed with the optimization of the vertical profile of the transistor, and good crystallinity of SiGe was achieved by using a UHV/CVD system with high-pressure H/sub 2/ precleaning of the substrate. As a result, a record cutoff frequency up to 130 GHz and the current gain up to 29,000 were obtained with a graded and uniform Ge profiles, respectively.
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