Analytical quantum mechanical model for accumulation capacitance of MOS structures

Shinichi Saito, Kazuyoshi Torii, Masahiko Hiratani, +1

IEEE Electron Device Letters

Device ModelingElectrical EngineeringEngineeringPhysicsNanoelectronics +10

Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectrics

Shigeo Tsujikawa, Toshiyuki Mine, Kenji Watanabe, +6

Electrical EngineeringEngineeringPhysicsNanoelectronicsStress-induced Leakage Current +8

Remote-charge-scattering limited mobility in field-effect transistors with SiO2 and Al2O3∕SiO2 gate stacks

Shinichi Saito, Kazuyoshi Torii, Yasuhiro Shimamoto, +8

Journal of Applied Physics

Electrical EngineeringEngineeringRemote-charge-scattering Limited MobilityPhysicsField-effect Transistors +12

130-GHz f/sub T/ SiGe HBT technology

Katsuya Oda, E. Ohue, M. Tanabe, +3

Electrical EngineeringRecord Cutoff FrequencyEngineeringRf SemiconductorHigh-frequency Device +11

Electro-Luminescence from Ultra-Thin Silicon

Shinichi Saito, Digh Hisamoto, Haruka Shimizu, +9

Japanese Journal of Applied Physics

Two-dimensional QuantumElectrical EngineeringPhotoluminescenceEngineeringPhysics +11

Improved theory for remote-charge-scattering-limited mobility in metal–oxide–semiconductor transistors

Shinichi Saito, Kazuyoshi Torii, Masahiko Hiratani, +1

Applied Physics Letters

SemiconductorsDevice ModelingSemiconductor TechnologyElectronic DevicesEngineering +11

A selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay

Katsuyoshi Washio, E. Ohue, Katsuya Oda, +3

Electrical EngineeringEngineeringRf SemiconductorSige-base StructureNanoelectronics +11

Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics

Shinichi Saito, Kazuyoshi Torii, Yasuhiro Shimamoto, +9

Applied Physics Letters

Device ModelingElectrical EngineeringEngineeringPhysicsNanoelectronics +12

Silicon light-emitting transistor for on-chip optical interconnection

Shinichi Saito, Digh Hisamoto, Haruka Shimizu, +9

Applied Physics Letters

Photonic DevicePhotonicsElectrical EngineeringOptical InterconnectsEngineering +12

Formation of ultrashallow <i>p</i>+ layers in silicon by thermal diffusion of boron and by subsequent rapid thermal annealing

T. Inada, Atsushi Kuranouchi, H. Hirano, +3

Applied Physics Letters

EngineeringChemistrySilicon On InsulatorSemiconductorsBoron Nitride +17