Analytical quantum mechanical model for accumulation capacitance of MOS structures

Abstract

We propose a new analytical model to quantitatively simulate capacitance-voltage (C-V) characteristics under accumulation conditions in metal-oxide-semiconductor structures. Based on the exponential potential, we have obtained the exact solution of the Schrodinger equation for all bound states that are consistent with quantum statistics and Gauss' law. The calculated C-V curves are in good agreement with measured ones by using the proposed model. One can easily obtain the results equivalent to full numerical solutions based on our model.