H. Shimamoto

A 0.2-μm 180-GHz-f/sub max/ 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

Katsuyoshi Washio, E. Ohue, H. Shimamoto et al. · IEEE Transactions on Electron Devices · 2002 · 83 citations

Engineering, Radio Frequency, Integrated Circuits +16

High density 3D LSI technology using W/Cu hybrid TSVs

M. Murugesan, Hisashi Kino, A. Hashiguchi et al. · 2011 · 44 citations

Materials Engineering, Materials Science, Electrical Engineering +15

A selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay

Katsuyoshi Washio, E. Ohue, Katsuya Oda et al. · 2002 · 43 citations

Electrical Engineering, Engineering, Rf Semiconductor +13

82 GHz dynamic frequency divider in 5.5 ps ECL SiGe HBTs

Katsuyoshi Washio, E. Ohue, Katsuya Oda et al. · 2002 · 38 citations

Semiconductor Technology, Electrical Engineering, Dynamic Frequency Divider +7

67-GHz static frequency divider using 0.2-μm self-aligned SiGe HBTs

Katsuyoshi Washio, R. Hayami, E. Ohue et al. · IEEE Transactions on Microwave Theory and Techniques · 2001 · 34 citations

Power Consumption, Electrical Engineering, Millimeter Wave Technology +11