Modeling of TID-induced leakage current in ultra-deep submicron SOI NMOSFETs

Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices

Daniel M. Fleetwood · IEEE Transactions on Nuclear Science · 2013 · 369 citations

Medicine, Electrical Engineering, Nuclear Engineering +14

Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

Ivan Sanchez Esqueda, Hugh Barnaby, M. King · IEEE Transactions on Nuclear Science · 2015 · 132 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +17

Modeling of Radiation-Induced Leakage and Low Dose-Rate Effects in Thick Edge Isolation of Modern MOSFETs

Gennady I. Zebrev, Maxim S. Gorbunov · IEEE Transactions on Nuclear Science · 2009 · 56 citations

Engineering, Electrical Engineering, Microelectronics +16

The current-carrying corner inherent to trench isolation

A. Bryant, Wilfried Haensch, J. Mandelman et al. · IEEE Electron Device Letters · 1993 · 35 citations

Engineering, Computer Engineering, Electrical Engineering +15

Radiation Hardening by the Modification of Shallow Trench Isolation Process in Partially Depleted SOI MOSFETs

Chao Peng, Zhiyuan Hu, Yunfei En et al. · IEEE Transactions on Nuclear Science · 2018 · 18 citations

Engineering, Materials Engineering, Radiation Protection +16