A. Bryant

Low-power CMOS at Vdd=4kT/q

A. Bryant, Jeffrey S. Brown, P.E. Cottrell et al. · 2002 · 77 citations

Low-power Electronics, V 180, Electrical Engineering +10

GIDL in Doped and Undoped FinFET Devices for Low-Leakage Applications

Pranita Kerber, Qintao Zhang, Siyuranga O. Koswatta et al. · IEEE Electron Device Letters · 2012 · 63 citations

Hardware Security, Device Modeling, Electrical Engineering +12

Energy optimality and variability in subthreshold design

Scott Hanson, Bo Zhai, David Blaauw et al. · 2006 · 44 citations

Low-power Electronics, Electrical Engineering, Engineering +14

The effects of gate field on the leakage characteristics of heavily doped junctions

W. Noble, Steven H. Voldman, A. Bryant · IEEE Transactions on Electron Devices · 1989 · 37 citations

Engineering, Emerging Memory Technology, Leakage Mechanism +19

The current-carrying corner inherent to trench isolation

A. Bryant, Wilfried Haensch, J. Mandelman et al. · IEEE Electron Device Letters · 1993 · 35 citations

Geotechnical Engineering, Device Modeling, Electrical Engineering +11