Pranita Kerber

GIDL in Doped and Undoped FinFET Devices for Low-Leakage Applications

Pranita Kerber, Qintao Zhang, Siyuranga O. Koswatta et al. · IEEE Electron Device Letters · 2012 · 63 citations

Hardware Security, Device Modeling, Electrical Engineering +12

A Simulation Study of Oxygen Vacancy-Induced Variability in ${\rm HfO}_{2}$ /Metal Gated SOI FinFET

Amit Ranjan Trivedi, Takashi Ando, Amith Singhee et al. · IEEE Transactions on Electron Devices · 2014 · 24 citations

Soi Finfet, Engineering, Silicon On Insulator +16

Scalability of ultra-thin-body and BOX InGaAs MOSFETs on silicon

Lukas Czornomaz, N. Daix, Pranita Kerber et al. · 2013 · 23 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node

Benjamin D. Briggs, C. B. Peethala, D.L. Rath et al. · 2017 · 20 citations

Integration Scheme, Engineering, Device Integration +18

(Invited) Silicon Germanium FinFET Device Physics, Process Integration and Modeling Considerations

Darsen D. Lu, P. Morin, Bhagawan Sahu et al. · ECS Transactions · 2014 · 17 citations

Process Integration, Device Modeling, Electrical Engineering +15