Pranita Kerber - Concepedia

Author

Pranita Kerber

Also Known As

Kerber, Pranita; Leeson, Kenneth Michael; Gao, Xujiao; Musson, Lawrence; Campbell, Philip; McLain, Michael Lee; Paskaleva, Biliana Stefanova; Mar, Alan, P. Kerber, Pranita Kerber

Publications

213

Citations

H-Index

Concepts

All Affiliations

IBM (United States)IBM Research - Thomas J. Watson Research Center GlobalFoundries (Germany)

About

Pranita Kerber is an author at IBM (United States) specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	177
2	Applied Physics	7	7	177
3	Electrical Engineering	7	7	177
4	Computer Engineering	2	2	77
5	Materials Science	1	1	20

Pranita Kerber

Publications

187

Citations

H-Index

Page 1

	Year	Citations
GIDL in Doped and Undoped FinFET Devices for Low-Leakage Applications Pranita Kerber, Qintao Zhang, Siyuranga O. Koswatta, IEEE Electron Device Letters Hardware SecurityDevice ModelingElectrical EngineeringUndoped Finfet DevicesEngineering	2012	63
A Simulation Study of Oxygen Vacancy-Induced Variability in ${\rm HfO}_{2}$ /Metal Gated SOI FinFET Amit Ranjan Trivedi, Takashi Ando, Amith Singhee, IEEE Transactions on Electron Devices Soi FinfetEngineeringSilicon On InsulatorSemiconductor DeviceOxygen Vacancy	2014	24
Scalability of ultra-thin-body and BOX InGaAs MOSFETs on silicon Lukas Czornomaz, N. Daix, Pranita Kerber, SemiconductorsSemiconductor TechnologyElectrical EngineeringBox Ingaas MosfetsEngineering	2013	23
Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node Benjamin D. Briggs, C. B. Peethala, D.L. Rath, Integration SchemeEngineeringDevice IntegrationInterconnect (Integrated Circuits)Physical Design (Electronics)	2017	20
(Invited) Silicon Germanium FinFET Device Physics, Process Integration and Modeling Considerations Darsen D. Lu, P. Morin, Bhagawan Sahu, ECS Transactions Process IntegrationDevice ModelingElectrical EngineeringEngineeringSige-channel Germanium Content	2014	17
Strained SOI FINFET SRAM Design Pranita Kerber, Rouwaida Kanj, Rajiv Joshi IEEE Electron Device Letters Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureFerroelectric Random-access Memory	2013	16
Reliable airgap BEOL technology in advanced 48 nm pitch copper/ULK interconnects for substantial power and performance benefits C. Penny, S. James Gates, B. Peethala, EngineeringAirgap FormationComputer ArchitecturePower ElectronicsInterconnect (Integrated Circuits)	2017	14
High-performance CMOS-compatible self-aligned In<inf>0.53</inf>Ga<inf>0.47</inf>As MOSFETs with GMSAT over 2200 &#x00B5;S/&#x00B5;m at V<inf>DD</inf> = 0.5 V Yu‐Chih Sun, A. Majumdar, Chiyu Cheng,	2014	10

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