Benjamin D. Briggs - Concepedia

Author

Benjamin D. Briggs

University at Albany, State University of New York

Also Known As

, B. Briggs, B. D. Briggs, B.D. Briggs, Benjamin Briggs, Benjamin D Briggs, Benjamin D. Briggs

Publications

376

Citations

H-Index

Concepts

All Affiliations

University at Albany, State University of New York Albany State University GlobalFoundries (Germany)Samsung (United States)Albany Technical College

About

Benjamin D. Briggs is an author at University at Albany, State University of New York specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	14	325
2	Applied Physics	12	13	313
3	Electrical Engineering	12	12	255
4	Computer Engineering	1	1	12
5	Computer Science	1	1	12

Benjamin D. Briggs

Publications

325

Citations

H-Index

Page 1

	Year	Citations
Electromechanical robustness of monolayer graphene with extreme bending Benjamin D. Briggs, Bhaskar Nagabhirava, Gayathri Rao, Applied Physics Letters Materials ScienceGraphene NanomeshesNanosheetExtreme DeformationEngineering	2010	53
Bilayer Graphene System: Current-Induced Reliability Limit Tianhua Yu, Eun‐Kyu Lee, Benjamin D. Briggs, IEEE Electron Device Letters Materials ScienceMaterials EngineeringElectrical EngineeringGraphene NanomeshesEngineering	2010	36
Bilayer Graphene/Copper Hybrid On-Chip Interconnect: A Reliability Study Tianhua Yu, Eun‐Kyu Lee, Benjamin D. Briggs, IEEE Transactions on Nanotechnology Materials EngineeringMaterials ScienceElectrical EngineeringReliability StudyEngineering	2010	33
Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node T. Nogami, Xingxing Zhang, James J. Kelly, Materials EngineeringMaterials ScienceElectrical EngineeringElectromigration TechniqueEngineering	2017	30
Spintronic majority gates Iuliana Radu, Odysseas Zografos, Adrien Vaysset, EngineeringSpintronic MaterialSpin DynamicSpin PhenomenonMagnetism	2015	25
Cobalt/copper composite interconnects for line resistance reduction in both fine and wide lines T. Nogami, R. Patlolla, James J. Kelly, Materials ScienceMaterials EngineeringElectrical EngineeringCobalt/copper Composite InterconnectsEngineering	2017	22
Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node Benjamin D. Briggs, C. B. Peethala, D.L. Rath, Integration SchemeEngineeringDevice IntegrationInterconnect (Integrated Circuits)Physical Design (Electronics)	2017	20
Influence of Copper on the Switching Properties of Hafnium Oxide-Based Resistive Memory Benjamin D. Briggs, S.M. Bishop, Kevin Leedy, MRS Proceedings Materials ScienceElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2011	18
Ion implantation synthesized copper oxide-based resistive memory devices S.M. Bishop, H. Bakhru, Steven W. Novak, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringIon ImplantationEngineering	2011	17
Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes T. Nogami, Benjamin D. Briggs, Sevim Korkmaz, Metallization SchemeEngineeringMaterial InnovationAdvanced Technology NodesMetallic Functional Material	2015	17

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