Iuliana Radu - Concepedia

Author

Iuliana Radu

Also Known As

Devin Verreck, I P Radu, I Radu, I. P. Radu, I. Radu, I..P. Radu, I.P. Radu, IULIANA RADU, Iuliana P Radu, Iuliana P. Radu

384

Publications

7.8K

Citations

H-Index

143

Concepts

All Affiliations

IMEC KU Leuven Taiwan Semiconductor Manufacturing Company (Taiwan)Taiwan Semiconductor Manufacturing Company (United States)Intel (United States)

About

Iuliana Radu is an author at IMEC specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	39	107	4.8K
2	Applied Physics	37	102	4.6K
3	Chemistry	12	15	615
4	Natural Sciences	11	13	782
5	Chemical Engineering	9	9	468

Iuliana Radu

161

Publications

7.2K

Citations

H-Index

Page 1

	Year	Citations
10&#x00D7;10nm<sup>2</sup> Hf/HfO<inf>x</inf> crossbar resistive RAM with excellent performance, reliability and low-energy operation B. Govoreanu, Gouri Sankar Kar, YY Chen, Non-volatile MemoryResistive RamEngineeringExcellent PerformanceEmerging Memory Technology	2011	603
Nanoscale spin reversal by non-local angular momentum transfer following ultrafast laser excitation in ferrimagnetic GdFeCo Catherine E. Graves, A. H. Reid, T. Wang, Nature Materials Ultrafast Laser ExcitationMagnetismFerromagnetismSpintronicsEngineering	2013	328
Quasi-Particle Properties from Tunneling in the <i>v</i> = 5/2 Fractional Quantum Hall State Iuliana Radu, Jeffrey B. Miller, C. M. Marcus, Science	2008	310
Electrical Control of Spin Relaxation in a Quantum Dot Sami Amasha, Kenneth MacLean, Iuliana Radu, Physical Review Letters	2008	234
How to report and benchmark emerging field-effect transistors Zhihui Cheng, Chin‐Sheng Pang, Peiqi Wang, Nature Electronics Electrical EngineeringEngineeringField-effect TransistorsNanoelectronicsElectronic Engineering	2022	164
Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors Giovanni V. Resta, Yashwanth Balaji, Dennis Lin, ACS Nano	2018	149
High-quality, large-area MoSe<sub>2</sub> and MoSe<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy Evangelia Xenogiannopoulou, Polychronis Tsipas, K. E. Aretouli, Nanoscale	2015	140
Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI Gage Hills, M. Garcia Bardon, G. Doornbos, IEEE Transactions on Nanotechnology EngineeringVlsi DesignEnergy EfficiencyDigital VlsiComputer Architecture	2018	131
Future Logic Scaling: Towards Atomic Channels and Deconstructed Chips Srikanth Samavedam, Julien Ryckaert, Eric Beyne, EngineeringVlsi DesignLogic ScalingComputer ArchitectureMemory Access	2020	109
Reconfigurable submicrometer spin-wave majority gate with electrical transducers Giacomo Talmelli, T. Devolder, Nick Träger, Science Advances	2020	105

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