Jiangwei Cui

The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose

Qiwen Zheng, Jiangwei Cui, Wu Lu et al. · IEEE Transactions on Nuclear Science · 2018 · 218 citations

Total Ionizing Dose, Engineering, Single-event Upset Sensitivity +16

Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors

Qiwen Zheng, Jiangwei Cui, Liewei Xu et al. · IEEE Transactions on Nuclear Science · 2019 · 22 citations

Electrical Engineering, Total Ionizing Dose, Engineering +10

Impact of switching frequencies on the TID response of SiC power MOSFETs

Sheng Yang, Xiaowen Liang, Jiangwei Cui et al. · Journal of Semiconductors · 2021 · 20 citations

Electrical Engineering, Radiation Testing, Engineering +14

Total Ionizing Dose Influence on the Single-Event Upset Sensitivity of 130-nm PD SOI SRAMs

Qiwen Zheng, Jiangwei Cui, Mengxin Liu et al. · IEEE Transactions on Nuclear Science · 2017 · 19 citations

Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET

Xiaowen Liang, Jiangwei Cui, Qiwen Zheng et al. · Radiation effects and defects in solids · 2020 · 19 citations

Reliability, Sic Mosfet, Electrical Engineering +14