Implementation of digital-to-analog converter through CP-based GaAs/GaSb nanowire GAA-TFET

A unified mobility model for device simulation—I. Model equations and concentration dependence

D.B.M. Klaassen · Solid-State Electronics · 1992 · 892 citations

Engineering, Electrical Engineering, Semiconductor Devices +15

Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope

Tejas Krishnamohan, Donghyun Kim, Shyam Raghunathan et al. · 2008 · 491 citations

Engineering, Electrical Engineering, Physics +17

Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

Kuo-Hsing Kao, Anne S. Verhulst, William G. Vandenberghe et al. · IEEE Transactions on Electron Devices · 2011 · 467 citations

Engineering, Materials Science, Physics +17

Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs

Sang‐Hyun Oh, D. Monroe, J. M. Hergenrother · IEEE Electron Device Letters · 2000 · 356 citations

Engineering, Electrical Engineering, Electronic Materials +16

Vertical Si-Nanowire <formula formulatype="inline"><tex Notation="TeX">$n$</tex></formula>-Type Tunneling FETs With Low Subthreshold Swing (<formula formulatype="inline"><tex Notation="TeX">$\leq \hbox{50}\ \hbox{mV/decade}$</tex> </formula>) at Room Temperature

Ramanathan Gandhi, Zhixian Chen, Navab Singh et al. · IEEE Electron Device Letters · 2011 · 331 citations

Engineering, Electrical Engineering, Materials Science +17