Ramanathan Gandhi

Statistics

Publications

Citations

520

H-Index

Active since

2011

Affiliations

Institute of Microelectronics(Current)

National University of Singapore

University of California, Santa Barbara

Agency for Science, Technology and Research

Ramanathan Gandhi is an author at Institute of Microelectronics specializing in electrical engineering, gate-all-around transistors, and metal-oxide-semiconductor field-effect transistors.

Publications per year

2011–2011

Publications

Vertical Si-Nanowire <formula formulatype="inline"><tex Notation="TeX">$n$</tex></formula>-Type Tunneling FETs With Low Subthreshold Swing (<formula formulatype="inline"><tex Notation="TeX">$\leq \hbox{50}\ \hbox{mV/decade}$</tex> </formula>) at Room Temperature

Ramanathan Gandhi, Zhixian Chen, Navab Singh et al. · IEEE Electron Device Letters · 2011 · 331 citations

Engineering, Electrical Engineering, Materials Science +17

CMOS-Compatible Vertical-Silicon-Nanowire Gate-All-Around p-Type Tunneling FETs With $\leq 50$-mV/decade Subthreshold Swing

Ramanathan Gandhi, Zhixian Chen, Navab Singh et al. · IEEE Electron Device Letters · 2011 · 189 citations

Engineering, Electrical Engineering, Materials Science +16

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