IEEE Electron Device Letters · 2019 · 27 citations · 10 references
EngineeringElectrical EngineeringPhysicsMicroelectronicsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsSemiconductor InterfacesSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsHigh-temperature Device OperationHigh-temperature ElectronicsInterface TrapsSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide Power DevicesThreshold VoltageTraps
We demonstrated differences in the characteristics of planar and three-dimensional SiC MOSFETs at extremely high temperatures (around 500°C). There is a large threshold-voltage shift (ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ) from 25 to 500°C in the SiC MOSFETs. The V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> of the three-dimensional SiC MOSFET is half that of the planar SiC MOSFET. A large amount of electron emissions from shallow interface traps causes the ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> and is likely to affect the robustness of SiC MOSFETs against short circuits.
10
Shallow electron traps at the 4H–SiC/SiO2 interface
V. V. Afanas’ev, A. Stesmans, Gerhard Pensl et al. · Applied Physics Letters · 2000 · 143 citations
Hiroshi Yano, Hiroshi Nakao, Hidenori Mikami et al. · Applied Physics Letters · 2007 · 58 citations