Japanese Journal of Applied Physics · 2019 · 10 citations · 28 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsEnergy MaterialsSemiconductor MaterialsChemical Vapor DepositionEpitaxial GrowthGas InjectionIii-v SemiconductorsSemiconductor Crystal GrowthFlow Rate DependenceGallium Nitride (Gan) MaterialsGallium Nitride Crystal GrowthMethaneOxygen Partial Pressure EffectsVolumetric Flow Rate
Abstract The oxide vapor phase epitaxy method is expected to be a useful technique for bulk GaN growth, because it allows long-term growth without producing a solid byproduct. However, thick GaN crystals have not been realized due to the growth inhibition caused by polycrystal formation resulting from high H 2 O partial pressure. In this study, we formed GaN crystals with CH 4 gas to decrease the H 2 O partial pressure in a growth zone by the reaction of CH 4 with H 2 O to produce CO and H 2 . As a result, H 2 O partial pressure decreased with increasing CH 4 flow rate, and GaN layers could be grown without decrease of growth rate or degradation of the crystalline qualities at a flow rate of 50–100 sccm of CH 4 gas. Furthermore, we obtained high crystalline 400-um thick GaN crystals after a growth period of 10 h.
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