Akira Kitamoto

Fabrication of low-curvature 2 in. GaN wafers by Na-flux coalescence growth technique

Mamoru Imade, Masayuki Imanishi, Yuma Todoroki et al. · Applied Physics Express · 2014 · 80 citations

Engineering, Materials Engineering, Materials Science +17

Centimeter-Sized Bulk GaN Single Crystals Grown by the Na-Flux Method with a Necking Technique

Mamoru Imade, Kosuke Murakami, Daisuke Matsuo et al. · Crystal Growth & Design · 2012 · 53 citations

Engineering, Materials Engineering, Materials Science +16

Development of a 2-inch GaN wafer by using the oxide vapor phase epitaxy method

Junichi Takino, Tomoaki Sumi, Yoshio Okayama et al. · Japanese Journal of Applied Physics · 2019 · 38 citations

Engineering, Materials Engineering, Materials Science +17

Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3

Mamoru Imade, Yuan Bu, Tomoaki Sumi et al. · Journal of Crystal Growth · 2011 · 27 citations

Natural Sciences, Materials Engineering, Materials Science +15

Extreme reduction of on-resistance in vertical GaN p–n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method

Junichi Takino, Tomoaki Sumi, Yoshio Okayama et al. · Applied Physics Express · 2020 · 27 citations · Full text

Engineering, Electrical Engineering, Materials Science +17