Effect of carbon additive on increases in the growth rate of 2in GaN single crystals in the Na flux method

Fumio Kawamura, Masanori Morishita, Masaki Tanpo, +5

Journal of Crystal Growth

Materials ScienceAluminium NitrideEngineeringCarbon AdditiveGrowth Rate +6

Growth of bulk GaN crystal by Na flux method under various conditions

Yusuke Mori, Mamoru Imade, K. Murakami, +8

Journal of Crystal Growth

Materials ScienceEngineeringCrystal Growth TechnologyApplied PhysicsGan Power Device +5

Fabrication of low-curvature 2 in. GaN wafers by Na-flux coalescence growth technique

Mamoru Imade, Masayuki Imanishi, Yuma Todoroki, +8

Applied Physics Express

Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering +13

Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction

Fumio Kawamura, Masaki Tanpo, Naoya Miyoshi, +5

Journal of Crystal Growth

Materials ScienceWide-bandgap SemiconductorEngineeringDislocation InteractionLow Dislocation Density +6

Growth of Large GaN Single Crystals on High-Quality GaN Seed by Carbon-Added Na Flux Method

Mamoru Imade, Yasuhiro Hirabayashi, Yusuke Konishi, +6

Applied Physics Express

Materials ScienceEngineeringGrowth RateHigh Growth RateCrystal Growth Technology +4

Homoepitaxial Hydride Vapor Phase Epitaxy Growth on GaN Wafers Manufactured by the Na-Flux Method

Masayuki Imanishi, Takehiro Yoshida, Toshio Kitamura, +7

Crystal Growth & Design

Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringCrystalline Defects +13

Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals

Siddha Pimputkar, Sami Suihkonen, Mamoru Imade, +3

Journal of Crystal Growth

Wide-bandgap SemiconductorElectrical EngineeringEngineeringOptical PropertiesApplied Physics +3

Centimeter-Sized Bulk GaN Single Crystals Grown by the Na-Flux Method with a Necking Technique

Mamoru Imade, Kosuke Murakami, Daisuke Matsuo, +7

Crystal Growth & Design

Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering +12

Ultraviolet laser-induced degradation of CsLiB_6O_10 and β-BaB_2O_4

Kei Takachiho, Masashi Yoshimura, Yoshinori Takahashi, +3

Optical Materials Express

Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser Ablation +15

Dramatic reduction of dislocations on a GaN point seed crystal by coalescence of bunched steps during Na-flux growth

Masayuki Imanishi, Yuma Todoroki, Kosuke Murakami, +7

Journal of Crystal Growth

Materials ScienceEngineeringDislocation InteractionPhysicsCrystal Growth Technology +8