Effect of carbon additive on increases in the growth rate of 2in GaN single crystals in the Na flux method

Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN

J. Karpiński, J. Jun, S. Porowski · Journal of Crystal Growth · 1984 · 388 citations

Engineering, Materials Engineering, Materials Science +12

Preparation of GaN Single Crystals Using a Na Flux

Hisanori Yamane, Masahiko Shimada, Simon J. Clarke et al. · Chemistry of Materials · 1997 · 287 citations

Engineering, Materials Engineering, Materials Science +16

A GaN bulk crystal with improved structural quality grown by the ammonothermal method

Tadao Hashimoto, Feng Wu, James S. Speck et al. · Nature Materials · 2007 · 265 citations

Engineering, Materials Engineering, Materials Science +14

Growth and characterization of freestanding GaN substrates

Kensaku Motoki, Takuji Okahisa, Seiji Nakahata et al. · Journal of Crystal Growth · 2002 · 188 citations

Engineering, Materials Engineering, Materials Science +12

Thermodynamical properties of III–V nitrides and crystal growth of GaN at high N2 pressure

S. Porowski, I. Grzegory · Journal of Crystal Growth · 1997 · 184 citations

Engineering, Materials Engineering, Materials Science +13