Metal-Alloy Cu Surface Passivation Leads to High Quality Fine-Pitch Bump-Less Cu-Cu Bonding for 3D IC and Heterogeneous Integration Applications

Abstract

In this paper, we report a low temperature, fine-pitch, bump-less, damascene compatible Cu-Cu thermocompression bonding, using an optimized ultra-thin passivation layer, Constantan, which is an alloy (Copper-Nickel) of 55% Cu and 45% Ni. Surface oxidation and its roughness are the major bottlenecks in achieving high quality, low temperature, and fine-pitch Cu-Cu bonding. In this endeavor, we have used Cu rich alloy (Constantan) for passivation of Cu surface prior to bonding. We have systematically optimized the constantan passivation layer thickness for high quality low temperature, low pressure, bump-less Cu-Cu bonding. Also, we have studied systematically the efficacy of Cu surface passivation with optimized ultra-thin constantan alloy passivation layer. After rigorous trial and optimization, we successfully identified 2 nm passivation layer thickness, at which very high quality Cu-Cu bonding could be accomplished at sub 200 °C with a nominal contact pressure of 0.4 MPa. Post-bonding, electrical and mechanical characterization were validated using four-probe IV measurement and bond strength measurement respectively. Furthermore, Cu-Cu bonding interface was analyzed using IR wafer bonder inspection tool. Very high bond strength of 163 MPa and defect free interface observed by WBI-IR clearly suggests, Cu-Cu finepitch bonding with optimized ultra-thin alloy of 2 nm thick constantan, is of very high quality and reliable. Moreover, this novel bonding approach with alloy based interconnect passivation technique is the prime contestant for future heterogeneous integration.