Copper Wafer Bonding

Abstract

Silicon wafers, coated with nm evaporated copper, were successfully bonded at for with a postbonding anneal in for . The postbonding anneal was required for successful bonding, but the annealing temperature did not influence the bond strength from 400 to . The inclusion of a tantalum diffusion barrier for did not affect the bonding strength or the bonding temperature. ©1999 The Electrochemical Society