Low-temperature Bonding
Low-Temperature Bonding is a wafer bonding technique that belongs to the class of direct bonding methods and is distinguished by its execution at temperatures significantly below 400 °C, enabling minimal thermal budget and compatibility with temperature-sensitive materials and integrated circuit processing.
618
Publications
24.5K
Citations
2.1K
Authors
448
Institutions
Publications per year
2017–2026
169
Parents
618
U. Gösele, Qiaoling Tong · Annual Review of Materials Science · 1998 · 594 citations
Frank Niklaus, Göran Stemme, Jian‐Qiang Lu et al. · Journal of Applied Physics · 2006 · 463 citations
1–5 of 618
2.1K
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448
The University of Tokyo
Tokyo, Japan
24 h-index
120 publications
4.8K citations

National Yang Ming Chiao Tung University
Hsinchu, Taiwan
24 h-index
186 publications
9.4K citations

Harbin Institute of Technology
Harbin, China
19 h-index
129 publications
4.5K citations
Nanyang Technological University
Singapore, Singapore
17 h-index
63 publications
1.6K citations
Max Planck Institute of Microstructure Physics
Halle, Germany
15 h-index
46 publications
2.7K citations

National Institute of Advanced Industrial Science and Technology
Tsukuba, Japan
14 h-index
58 publications
1.8K citations
The University of Osaka
Osaka, Japan
14 h-index
75 publications
3K citations

Chinese Academy of Sciences
Beijing, China
13 h-index
41 publications
1K citations
1–8 of 448
32 publications · 1.2K citations
23
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JMM · 29 publications · 2K citations
23
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25 publications · 1.5K citations
19
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JJAP · 20 publications · 523 citations
15
h-index
14 publications · 513 citations
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