U. Gösele - Concepedia

Author

U. Gösele

Max Planck Institute of Microstructure Physics

Also Known As

U Gösele, U. Gosele, U. Gösele, U. Gósele, U. Gösele, U. M. Gösele, U.M. Gösele, Ulich M. Gösele

Publications

3.8K

Citations

H-Index

Concepts

All Affiliations

Max Planck Institute of Microstructure Physics Duke University Max Planck Society RTI International Physico-Technical Institute

About

U. Gösele is an author at Max Planck Institute of Microstructure Physics specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	31	3.6K
2	Applied Physics	24	30	3.6K
3	Electrical Engineering	6	6	504
4	Chemistry	4	4	114
5	Natural Sciences	3	3	74

U. Gösele

Publications

3.6K

Citations

H-Index

Page 1

	Year	Citations
SEMICONDUCTOR WAFER BONDING U. Gösele, Qiaoling Tong Annual Review of Materials Science EngineeringOptoelectronic DevicesSilicon On InsulatorSemiconductor Wafer BondingSemiconductors	1998	589
A model of extrusions and intrusions in fatigued metals I. Point-defect production and the growth of extrusions U. Gösele, H. Mughrabi Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties EngineeringSevere Plastic DeformationRealistic ModelMechanical EngineeringPersistent Slip Bands	1981	528
Mechanism and kinetics of the diffusion of gold in silicon U. Gösele, W. Frank, A. Seeger Applied Physics A Materials ScienceEngineeringDiffusion ResistancePhysicsNanotechnology	1980	360
Radiative recombination in type-II GaSb/GaAs quantum dots Fariba Hatami, N. N. Ledentsov, Marius Grundmann, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesGasb DotsType Ii	1995	324
Silicon Nanocrystals: Size Matters J. Heitmann, F. Müller, Margit Zacharias, Advanced Materials EngineeringSemiconductorsNanoscale ChemistryNanostructure SynthesisPhase Separation	2005	285
Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates Qiaoling Tong, Karsten Gutjahr, S. Hopfe, Applied Physics Letters Diamond SamplesEngineeringSame Activation EnergyOptoelectronic DevicesIntegrated Circuits	1997	220
Low temperature wafer direct bonding Qin‐Yi Tong, G. Cha, R. Gafiteanu, Journal of Microelectromechanical Systems Materials ScienceRoom TemperatureWafer Scale ProcessingEngineeringAdvanced Packaging (Semiconductors)	1994	190
Wafer Direct Bonding: From Advanced Substrate Engineering to Future Applications in Micro/Nanoelectronics Silke Christiansen, Rajendra Singh, U. Gösele Proceedings of the IEEE EngineeringSilicon On InsulatorWafer Scale ProcessingAdvanced Packaging (Semiconductors)Nanoelectronics	2006	172
The formation of swirl defects in silicon by agglomeration of self-interstitials H. Föll, U. Gösele, Bernd O. Kolbesen Journal of Crystal Growth Materials ScienceEngineeringPhysicsMicrofabricationSurface Science	1977	127
Three-dimensional macroporous silicon photonic crystal with large photonic band gap J. Schilling, Jeffrey O. White, Axel Scherer, Applied Physics Letters Materials SciencePhotonicsPhotonic DevicePhotonic SensorEngineering	2004	89

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