Ultra-low rate dry etching conditions for fabricating normally-off field effect transistors on AlGaN/GaN heterostructures

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi et al. · IEEE Transactions on Electron Devices · 2006 · 560 citations

Engineering, Electrical Engineering, Materials Engineering +17

Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

Yong Cai, Yugang Zhou, Kei May Lau et al. · IEEE Transactions on Electron Devices · 2006 · 524 citations

Engineering, Electrical Engineering, Physics +17

Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for <i>n</i>-GaN

S. Ruvimov, Z. Liliental-Weber, J. Washburn et al. · Applied Physics Letters · 1996 · 291 citations

Engineering, Materials Engineering, Materials Science +17

Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

W. Lanford, Tsuyoshi Tanaka, Y. Otoki et al. · Electronics Letters · 2005 · 251 citations

Engineering, Electrical Engineering, Materials Science +17

Metal contacts to n-type GaN

A. C. Schmitz, A. T. Ping, M. Asif Khan et al. · Journal of Electronic Materials · 1998 · 189 citations

Engineering, Electrical Engineering, Materials Science +14