Jong‐Won Lim

High Figure-of-Merit (${V}_{\text{BR}}^{\text{2}}$ /${R}_{\text{ON}}$ ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier

J.‐H. Lee, Jeong-Min Ju, G. Atmaca et al. · IEEE Journal of the Electron Devices Society · 2018 · 45 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure

Hyeon-Tak Kwak, Seung-Bo Chang, Hyun‐Jung Kim et al. · Applied Sciences · 2018 · 31 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Microwave Low-Noise Performance of $0.17~\mu \text{m}$ Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate

Hyung Sup Yoon, Byoung‐Gue Min, Jong Min Lee et al. · IEEE Electron Device Letters · 2016 · 29 citations

Engineering, Electrical Engineering, Materials Science +17

Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric

Maruf Bhuiyan, Hong Zhou, Sung‐Jae Chang et al. · IEEE Transactions on Nuclear Science · 2017 · 26 citations

Engineering, Electrical Engineering, Materials Engineering +17

Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study

Kyu‐Won Jang, In‐Tae Hwang, Hyun‐Jung Kim et al. · Micromachines · 2019 · 26 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17