J.‐H. Lee

3nm GAA Technology featuring Multi-Bridge-Channel FET for Low Power and High Performance Applications

Geum-Jong Bae, Dong-il Bae, Mingu Kang et al. · 2018 · 285 citations

Engineering, Vlsi Design, Finfet Technology +16

AlGaN/GaN heterostructure pH sensor with multi-sensing segments

Yan Dong, Dong-Hyeok Son, Quan Dai et al. · Sensors and Actuators B Chemical · 2017 · 60 citations

Aluminum Gallium Nitride, Applied Physics, Multi-sensing Segments +2

Thermal activation energies of Mg in GaN:Mg measured by the Hall effect and admittance spectroscopy

Dojin Kim, Dong-Kul Ryu, N. A. Bojarczuk et al. · Journal of Applied Physics · 2000 · 56 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +14

High Figure-of-Merit (${V}_{\text{BR}}^{\text{2}}$ /${R}_{\text{ON}}$ ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier

J.‐H. Lee · IEEE Journal of the Electron Devices Society · 2018 · 41 citations · Full text

Wide-bandgap Semiconductor, Pcd Buffer Layer, Electrical Engineering +13

Interface characterization of ALD deposited Al₂O₃ on GaN by CV method

Clemens Ostermaier, Hyundong Lee, S. Hyun et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 39 citations

Semiconductors, Materials Science, Electrical Engineering +13