Dong-il Bae

3nm GAA Technology featuring Multi-Bridge-Channel FET for Low Power and High Performance Applications

Geum-Jong Bae, Dong-il Bae, Mingu Kang et al. · 2018 · 285 citations

Engineering, Vlsi Design, Finfet Technology +16

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

Kwangyou Seo, Bala Haran, Divya Gupta et al. · 2014 · 97 citations

Engineering, Vlsi Design, Finfet Technology +18

Multi-Level NAND Flash Memory with 63 nm-Node TANOS (Si-Oxide-SiN-Al2O3-TaN) Cell Structure

C.-H. Lee, Jaehyuck Choi, C. J. Kang et al. · 2006 · 36 citations

Non-volatile Memory, Cell Structure, Engineering +19

A novel tensile Si (n) and compressive SiGe (p) dual-channel CMOS FinFET co-integration scheme for 5nm logic applications and beyond

Dong-il Bae, Geum-Jong Bae, Krishna K. Bhuwalka et al. · 2016 · 30 citations

Electrical Engineering, Logic Applications, Engineering +13

Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB

Guangfan Jiao, M. Toledano-Luque, Kab-Jin Nam et al. · 2016 · 23 citations

Engineering, Sige Valance Band, Integrated Circuits +17