Guangfan Jiao

Investigation of hot carrier degradation in bulk FinFET

Eun‐Ae Chung, Kab-Jin Nam, Toshiro Nakanishi et al. · 2017 · 31 citations

Engineering, Electrical Engineering, Electronic Materials +16

Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric Under PBTI Stress

Guangfan Jiao, Chengjun Yao, Yi Xuan et al. · IEEE Transactions on Electron Devices · 2012 · 24 citations

Engineering, Electrical Engineering, Materials Science +17

Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB

Guangfan Jiao, M. Toledano-Luque, Kab-Jin Nam et al. · 2016 · 23 citations

Engineering, Electrical Engineering, Materials Science +17

Reliability of High-Mobility InGaAs Channel n-MOSFETs Under BTI Stress

Mingfu Li, Guangfan Jiao, Yaodong Hu et al. · IEEE Transactions on Device and Materials Reliability · 2013 · 16 citations

Engineering, Electrical Engineering, Materials Science +17

PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic

Jiwu Lu, Guangfan Jiao, Canute Vaz et al. · IEEE Transactions on Electron Devices · 2014 · 13 citations

Engineering, Computer Engineering, Electrical Engineering +17