Concepedia

Toshiro Nakanishi

TN

Statistics

Publications

12

Citations

326

H-Index

11

Active since

1983

Affiliations

Fujitsu (Japan)(Current)

Samsung (South Korea)

Toshiro Nakanishi is an author at Fujitsu (Japan) specializing in materials science, engineering, and semiconductor devices.

Publications per year

1983–2017

12

Publications

12

High-Density Layer at the SiO<sub>2</sub>/Si Interface Observed by Difference X-Ray Reflectivity

N. Awaji, Satoshi Ohkubo, Toshiro Nakanishi et al. · Japanese Journal of Applied Physics · 1996 · 80 citations

Engineering, Materials Engineering, Materials Science +17

Degradation of metal-oxide-semiconductor devices caused by iron impurities on the silicon wafer surface

Ritsuo Takizawa, Toshiro Nakanishi, Akira Ohsawa · Journal of Applied Physics · 1987 · 42 citations

Engineering, Materials Engineering, Materials Science +17

Investigation of ultra thin polycrystalline silicon channel for vertical NAND flash

Bio Kim, Seunghyun Lim, Dong Woo Kim et al. · 2011 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Thermal oxide growth at chemical vapor deposited SiO2/Si interface during annealing evaluated by difference x-ray reflectivity

N. Awaji, Satoshi Ohkubo, Toshiro Nakanishi et al. · Applied Physics Letters · 1997 · 32 citations

Natural Sciences, Materials Engineering, Materials Science +17

Investigation of hot carrier degradation in bulk FinFET

Eun‐Ae Chung, Kab-Jin Nam, Toshiro Nakanishi et al. · 2017 · 31 citations

Engineering, Electrical Engineering, Electronic Materials +16

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