Concepedia

Toshiro Nakanishi

TN

11

Publications

294

Citations

10

H-Index

1983

Active since

Affiliations

Fujitsu (Japan)(Current)

Toshiro Nakanishi is an author at Fujitsu (Japan) specializing in applied physics, engineering, and materials science.

Top concepts

EngineeringApplied PhysicsMaterial ScienceSurface ScienceMicroelectronicsNanoelectronicsCrystalline DefectsElectrical EngineeringThin FilmsIntegrated Circuits

Publications per year

1983–2011

11

Publications

11

High-Density Layer at the SiO<sub>2</sub>/Si Interface Observed by Difference X-Ray Reflectivity

N. Awaji, Satoshi Ohkubo, Toshiro Nakanishi et al. · Japanese Journal of Applied Physics · 1996 · 79 citations

Materials Science, Oxide Heterostructures, Ultrathin Thermal Oxides +13

Degradation of metal-oxide-semiconductor devices caused by iron impurities on the silicon wafer surface

Ritsuo Takizawa, Toshiro Nakanishi, Akira Ohsawa · Journal of Applied Physics · 1987 · 42 citations

Engineering, Silicon On Insulator, Semiconductor Device +17

Investigation of ultra thin polycrystalline silicon channel for vertical NAND flash

Bio Kim, Seunghyun Lim, Dong Woo Kim et al. · 2011 · 35 citations

Non-volatile Memory, Engineering, Integrated Circuits +16

Thermal oxide growth at chemical vapor deposited SiO2/Si interface during annealing evaluated by difference x-ray reflectivity

N. Awaji, Satoshi Ohkubo, Toshiro Nakanishi et al. · Applied Physics Letters · 1997 · 32 citations

Engineering, Cvd Sio2, Chemical Deposition +16

High-Accuracy X-ray Reflectivity Study of Native Oxide Formed in Chemical Treatment

N. Awaji, Yoshihiro Sugita, Satosi Ohkubo et al. · Japanese Journal of Applied Physics · 1995 · 24 citations

X-ray Spectroscopy, Engineering, Low Density +21

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