Thermal oxide growth at chemical vapor deposited SiO2/Si interface during annealing evaluated by difference x-ray reflectivity

Abstract

The x-ray interference technique has been applied to evaluate the structural changes of high temperature grown chemical vapor deposited (CVD) SiO2 film under several post annealing conditions. In annealing above 800 °C in O2 ambient, a thermal oxide growth has been found at the CVD SiO2/Si interface, and its precise thicknesses have been determined. The estimated diffusion coefficient of the oxidant in CVD film was about three times larger compared to that of thermal oxide. A threshold voltage shift in the oxide was found to strongly correlate to the thickness of the thermal oxide rather than to thermal modifications of the CVD SiO2 itself.