A physically based model for resistive memories including a detailed temperature and variability description

A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

Ximeng Guan, Shimeng Yu, H.‐S. Philip Wong · IEEE Electron Device Letters · 2012 · 276 citations

Engineering, Electrical Engineering, Materials Science +17

A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations

Peng Huang, Xiao Yan Liu, Bing Chen et al. · IEEE Transactions on Electron Devices · 2013 · 200 citations

Natural Sciences, Electrical Engineering, Materials Science +17

A new compact model for bipolar RRAMs based on truncated-cone conductive filaments—a Verilog-A approach

Gerardo González-Cordero, J.B. Roldán, F. Jiménez-Molinos et al. · Semiconductor Science and Technology · 2016 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs

Marco A. Villena, Mireia Bargalló González, J.B. Roldán et al. · Solid-State Electronics · 2015 · 43 citations

Natural Sciences, Materials Science, Physics +16

In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures

Gerardo González-Cordero, F. Jiménez-Molinos, J.B. Roldán et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2016 · 43 citations

Engineering, Electrical Engineering, Materials Science +17