F. Jiménez-Molinos - Concepedia

Author

F. Jiménez-Molinos

Also Known As

F Jimenez-Molinos, F Jiménez-Molinos, F, Jimenez-Molinos, F. Jimenez-Molinos, F. Jiménez-Molinos, Francisco Jimenez-Molinos, Francisco Jimenez‐Molinos, Francisco Jimnez-Molinos, Francisco Jiménez-Molinos, Jimenez-Molinos, Francisco

120

Publications

2.4K

Citations

H-Index

Concepts

All Affiliations

Universidad de Granada Institut de Microelectrònica de Barcelona Universitat Autònoma de Barcelona Leibniz Institute for High Performance Microelectronics Brandenburg University of Technology Cottbus-Senftenberg

About

F. Jiménez-Molinos is an author at Universidad de Granada specializing in microelectronics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	44	1.6K
2	Applied Physics	20	28	1.2K
3	Computer Engineering	15	21	612
4	Social Sciences	6	6	158
5	Public Health	1	1	14

F. Jiménez-Molinos

Publications

2.1K

Citations

H-Index

Page 1

	Year	Citations
Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates F. Gámiz, P. Cartujo, J.B. Roldán, Journal of Applied Physics Electrical EngineeringEngineeringPhysicsMonte Carlo SimulatorNanoelectronics	2002	181
Variability in Resistive Memories J.B. Roldán, E. Miranda, D. Maldonado, Advanced Intelligent Systems	2023	158
Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures F. Jiménez-Molinos, A. Palma, F. Gámiz, Journal of Applied Physics Device ModelingElectrical EngineeringEngineeringAssisted TunnelPhysics	2001	101
Direct and trap-assisted elastic tunneling through ultrathin gate oxides F. Jiménez-Molinos, F. Gámiz, A. Palma, Journal of Applied Physics Electrical EngineeringEngineeringAssisted TunnelPhysicsImage Force	2002	89
Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs Eduardo Pérez, D. Maldonado, Christian Acal, Microelectronic Engineering Materials ScienceElectrical EngineeringEngineeringCycle-to-cycle VariabilityNanoelectronics	2019	85
Resistive switching in HfO <sub>2</sub> based valence change memories, a comprehensive 3D kinetic Monte Carlo approach Samuel Aldana, P. García‐Fernández, Rocío Romero‐Zaliz, Journal of Physics D Applied Physics	2020	84
Simulation of thermal reset transitions in resistive switching memories including quantum effects Marco A. Villena, Mireia Bargalló González, F. Jiménez-Molinos, Journal of Applied Physics EngineeringThermal Reset TransitionsIn-depth StudyPhase Change MemoryQuantum Computing	2014	63
An in-depth simulation study of thermal reset transitions in resistive switching memories Marco A. Villena, F. Jiménez-Molinos, J.B. Roldán, Journal of Applied Physics Thermal Reset TransitionEngineeringThermal Reset TransitionsPower ElectronicsIn-depth Simulation Study	2013	62
A new compact model for bipolar RRAMs based on truncated-cone conductive filaments—a Verilog-A approach Gerardo González-Cordero, J.B. Roldán, F. Jiménez-Molinos, Semiconductor Science and Technology Materials EngineeringNon-volatile MemoryElectrical EngineeringNew Compact ModelEngineering	2016	61
A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO<sub>2</sub>/Si-n<sup>+</sup>-based RRAMs Samuel Aldana, P. García‐Fernández, A. Rodriguez-Fernandez, Journal of Physics D Applied Physics EngineeringEmerging Memory TechnologyElectric Potential 3DPhase Change MemorySemiconductor Device	2017	57

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