Concepedia

Memory Materials

Memory Materials is a class of chalcogenide-based phase-change materials that exhibit reversible and stable transitions between amorphous and crystalline states, enabling non-volatile data storage through distinct electrical or optical resistivity contrasts.

3.5K

Publications

208.6K

Citations

12.7K

Authors

1.8K

Institutions

Publications per year

2017–2026

1.1K

Parents

Publications

3.5K

Ferroelectric Memories

J. F. Scott, Carlos A. Paz de Araújo · Science · 1989 · 3.8K citations

, , +17

Spin-Transition Polymers: From Molecular Materials Toward Memory Devices

Olivier Kahn, Carina Martinez · Science · 1998 · 2.2K citations · Full text

, , +17

Lanthanum-substituted bismuth titanate for use in non-volatile memories

Bae Ho Park, Bo Soo Kang, Sang Don Bu et al. · Nature · 1999 · 2.2K citations

, , +13

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Myoung‐Jae Lee, Chang Bum Lee, Dongsoo Lee et al. · Nature Materials · 2011 · 2.2K citations

, , +14

Phase Change Memory

H.‐S. Philip Wong, Simone Raoux, Sang‐Bum Kim et al. · Proceedings of the IEEE · 2010 · 1.8K citations

, , +15

1–5 of 3.5K

Authors

12.7K

  1. ZS
    Zhitang Song

    Shanghai Institute of Microsystem and Information Technology, China

    145 publications · 5.7K citations

    38

    h-index

  2. SS
    Sannian Song

    Shanghai Institute of Microsystem and Information Technology, China

    83 publications · 2.6K citations

    29

    h-index

  3. JL
    Jianmei Lu

    Soochow University, China

    60 publications · 2.8K citations

    29

    h-index

  4. BL
    Bo Liu

    Chinese Academy of Sciences, China

    64 publications · 2.2K citations

    27

    h-index

  5. WC
    Wen‐Chang Chen

    National Taiwan University, Taiwan

    38 publications · 2.2K citations

    26

    h-index

1–5 of 12.7K

Institutions

1.8K

  1. Chinese Academy of Sciences

    Beijing, China

    61 h-index

    1.6K publications

    81.7K citations

  2. Samsung (South Korea)

    Seoul, South Korea

    43 h-index

    553 publications

    76.9K citations

  3. Institute of Microelectronics

    Beijing, China

    41 h-index

    515 publications

    37.4K citations

  4. Seoul National University

    Seoul, South Korea

    41 h-index

    403 publications

    37.9K citations

  5. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    40 h-index

    296 publications

    14K citations

  6. Tsinghua University

    Beijing, China

    40 h-index

    302 publications

    22.2K citations

  7. Shanghai Institute of Microsystem and Information Technology

    Shanghai, China

    40 h-index

    948 publications

    37.7K citations

  8. Nanyang Technological University

    Singapore, Singapore

    39 h-index

    335 publications

    35.4K citations

1–8 of 1.8K

Venues

  1. Applied Physics Letters

    350 publications · 21.2K citations

    71

    h-index

  2. Advanced Materials

    96 publications · 13.1K citations

    68

    h-index

  3. IEEE Electron Device Letters

    173 publications · 8.2K citations

    49

    h-index

  4. ACS Applied Materials & Interfaces

    92 publications · 4.8K citations

    44

    h-index

  5. Journal of Applied Physics

    122 publications · 6.8K citations

    40

    h-index

1–5