Bae Ho Park

Lanthanum-substituted bismuth titanate for use in non-volatile memories

Bae Ho Park, Bo Soo Kang, Sang Don Bu et al. · Nature · 1999 · 2.2K citations

Materials Science, Engineering, Lanthanum-substituted Bismuth Titanate +4

Reproducible resistance switching in polycrystalline NiO films

Sunae Seo, Myoung‐Jae Lee, David H. Seo et al. · Applied Physics Letters · 2004 · 932 citations

Non-volatile Memory, Engineering, Reproducible Resistance +16

Electrical observations of filamentary conductions for the resistive memory switching in NiO films

Dongso Kim, Sunae Seo, Seung‐Eon Ahn et al. · Applied Physics Letters · 2006 · 529 citations

Filamentary Conductions, Experimental Results, Electrical Engineering +13

Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

Myoung‐Jae Lee, Yeonsang Park, Dongseok Suh et al. · Advanced Materials · 2007 · 433 citations

Pt/vo2/pt Switch Element, Electrical Engineering, Non-volatile Memory +14

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

Myoung‐Jae Lee, Seungwu Han, Sang Ho Jeon et al. · Nano Letters · 2009 · 412 citations

Engineering, Emerging Memory Technology, Nanocomputing +20