Carlos A. Paz de Araújo

Author

Also Known As

C. A. Araujo, C. A. PAZ DE ARAUJO, C. A. Paz DE Araujo, C. A. Paz De Araujo, C. A. Paz de Araujo, C. Araujo, C. Paz De Araujo, C. Paz de Araujo, C.A. Araujo, C.A. Paz De Araujo

162

Publications

8.2K

Citations

H-Index

Concepts

All Affiliations

Symetrix (United States)University of Colorado Colorado Springs University of Colorado Boulder Panasonic (Japan)Olympus (Japan)

About

Carlos A. Paz de Araújo is an author at Symetrix (United States) specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	27	51	7.4K
2	Applied Physics	27	47	7.3K
3	Natural Sciences	2	2	61
4	Education	1	1	15
5	Medicine	1	1	10

Carlos A. Paz de Araújo

Publications

7.5K

Citations

H-Index

Page 1

	Year	Citations
Ferroelectric Memories J. F. Scott, Carlos A. Paz de Araújo Science Materials ScienceSpintronicsElectrical EngineeringStandard SiliconEngineering	1989	3.8K
Quantitative measurement of space-charge effects in lead zirconate-titanate memories J. F. Scott, Carlos A. Paz de Araújo, B. M. Melnick, Journal of Applied Physics EngineeringCharge TransportPhase Change MemoryLead Zirconate-titanate MemoriesElectronic Devices	1991	513
Fatigue and switching in ferroelectric memories: Theory and experiment H. M. Duiker, Paul D. Beale, J. F. Scott, Journal of Applied Physics Materials ScienceSpintronicsElectrical EngineeringFerroelasticsEngineering	1990	446
Ferroelectric memories Carlos A. Paz de Araújo, L. D. McMillan, B. M. Melnick, Ferroelectrics Materials EngineeringMaterials ScienceElectrical EngineeringFerroelasticsEngineering	1990	249
Integrated ferroelectrics Carlos A. Paz de Araújo, George W. Taylor Ferroelectrics Materials ScienceIntegrated FerroelectricsMultiferroicsElectrical EngineeringSemiconductor Hybrids	1991	231
Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds Hitoshi Watanabe, Takashi Mihara, Hiroyuki Yoshimori, Japanese Journal of Applied Physics EngineeringThin Film Process TechnologyChemistryFerroelectric Thin FilmsMultiferroics	1995	227
Radiation effects on ferroelectric thin-film memories: Retention failure mechanisms J. F. Scott, Carlos A. Paz de Araújo, H. Brett Meadows, Journal of Applied Physics Materials ScienceSemiconductorsEngineeringCrystalline DefectsFerroelectric Application	1989	225
Structure and Device Characteristics of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>-Based Nonvolatile Random-Access Memories J. F. Scott, Frances M. Ross, Carlos A. Paz de Araújo, MRS Bulletin Non-volatile MemoryElectrical EngineeringEngineeringEmerging Memory TechnologyApplied Physics	1996	192
Characteristics of Bismuth Layered SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin-Film Capacitors and Comparison with Pb(Zr, Ti)O<sub>3</sub> Takashi Mihara, Hiroyuki Yoshimori, Hitoshi Watanabe, Japanese Journal of Applied Physics EngineeringThin Film Process TechnologySrbi 4Srbi 2Ferroelectric Application	1995	188
Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films C. S. Ganpule, Andrei Stanishevsky, S. Aggarwal, Applied Physics Letters Materials SciencePiezoelectric ResponseEngineeringFerroelectric ApplicationApplied Physics	1999	112

Page 1