Integrated ferroelectrics

TLDR

The field of integrated ferroelectrics has evolved from early ferroelectric–semiconductor hybrids to modern thin‑film devices on semiconductor substrates, with growing commercial applications and resolved process interactions. The paper aims to formalize the field of integrated ferroelectrics. The authors propose a formal framework to define and structure the integrated ferroelectrics field.

Abstract

This paper attempts to formalize the field of Integrated Ferroelectrics. The history of devices that include ferroelectrics and semiconductor hybrids is reviewed. The modern ferroelectric device is a combination of ferroelectric thin-films onto a semiconductor single crystal substrate. The evolution of the field in the last few years seems to indicate that a variety of devices, based on this simple paradigm, is starting to appear. Although non-volatile memories and high dielectric constant integrated capacitors seem to be the technology drivers, many other applications are also being envisioned. The complexities of ferroelectric/semiconductor process interactions are also being resolved. At the writing of this paper, the field has grown into an established field of research with some commercial applications already beginning to appear.