IEEE Electron Device Letters · 2017 · 66 citations · 22 references
EngineeringComputer EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ModelingDevice ScalingMemory DevicesMemory ModelingNoise In Electronic DevicesNoise In Semiconductor DevicesFlash MemoryFlash Memory DevicesMemory ArraysNand Flash MemoryPolycrystalline SiliconRandom Telegraph NoiseTemperature EffectsThreshold Voltage
This letter investigates the major differences between planar (2-D) and vertical-channel (3-D) NAND Flash memory arrays in terms of their temperature dependences. Attention is focused on three relevant parameters for memory array operation, namely, cell threshold-voltage, string saturation current, and width of the random telegraph noise distribution. Results highlight that the transition from 2-D to 3-D arrays introduced non-negligible changes in the temperature behavior of these parameters, whose origin is traced back to the different channel material of the technologies, i.e., monocrystalline versus polycrystalline silicon.
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A. Ghetti, Christian Monzio Compagnoni, Alessandro S. Spinelli et al. · IEEE Transactions on Electron Devices · 2009 · 212 citations
Engineering, Computer Engineering, Electrical Engineering +17