Symposium on VLSI Technology · 2006 · 377 citations · 0 references
EngineeringComputer EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ScalingIntegrated Circuit DesignMemory DevicesMemory Subsystem DesignMetal-oxide-semiconductor Field-effect TransistorsNanoelectronicsFlash MemoryFlash Memory DevicesMemory Array ArchitectureMemory Cell DesignMemory Circuit DesignNand Flash MemoryNanoelectronic Memory DevicesNon-volatile Memory Design
Vertical NAND flash memory cell array by TCAT (terabit cell array transistor) technology is proposed. Damascened metal gate SONOS type cell in the vertical NAND flash string is realized by a unique dasiagate replacementpsila process. Also, conventional bulk erase operation of the cell is successfully demonstrated. All advantages of TCAT flash is achieved without any sacrifice of bit cost scalability.