EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor MaterialsDevice CharacterizationDevice ReliabilityDielectricsSemiconductor Device MaterialsSemiconductor ReliabilitySilicon MaterialsCmos ReliabilityGate Dielectric EngineeringGate DielectricsGate Oxide DegradationGate Oxide ReliabilityHigh-k DielectricsReliability DegradationReliability Degradation Mechanisms
High-k gate dielectric materials are likely to be implemented in Si CMOS processes in the near future. Reliability characteristics that closely match, or exceed, those of SiO/sub 2/ will be one of the primary goals of future development work. In this paper we review the status of reliability studies of high-k gate dielectrics. High-k materials show novel reliability phenomena related to the asymmetric gate band structure and the presence of fixed charge. The reliability of high-k structures is influenced both by the interfacial layer as well as the high-k layer. Attainment of reliability goals will require elimination of charging effects, which dominate transistor degradation.
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Current transport in metal/hafnium oxide/silicon structure
Weihang Zhu, Tso‐Ping Ma, T. Tamagawa et al. · IEEE Electron Device Letters · 2002 · 290 citations