Influence of Underlap on Gate Stack DG-MOSFET for analytical study of Analog/RF performance

Electron and hole mobilities in silicon as a function of concentration and temperature

Neha Arora, John R. Hauser, D.J. Roulston · IEEE Transactions on Electron Devices · 1982 · 960 citations

Natural Sciences, Materials Science, Physics +11

A 2-D Analytical Solution for SCEs in DG MOSFETs

Xiaowen Liang · IEEE Transactions on Electron Devices · 2004 · 301 citations

Engineering, Electrical Engineering, Electronic Materials +16

The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

Baolei Cheng, Min Cao, A. Inani et al. · IEEE Transactions on Electron Devices · 1999 · 299 citations

Engineering, Electrical Engineering, Materials Science +17

Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

Michel Houssa, L. Pantisano, L.-Å. Ragnarsson et al. · Materials Science and Engineering R Reports · 2006 · 276 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Nanoscale FinFETs with gate-source/drain underlap

Vishal Trivedi, J.G. Fossum, M.M. Chowdhury · IEEE Transactions on Electron Devices · 2004 · 272 citations

Engineering, Electrical Engineering, Electronic Materials +16