Concepedia

The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes

Randy P. Tompkins, Timothy A. Walsh, Michael A. Derenge, K. W. Kirchner, Shuai Zhou, Cuong Nguyen, Kenneth A. Jones, Puneet Suvarna, Mihir Tungare, Neeraj Tripathi,

Journal of materials research/Pratt's guide to venture capital sources · 2011 · 17 citations · 15 references

DOI

Concepts

References

15

Carbon impurities and the yellow luminescence in GaN

John L. Lyons, Anderson Janotti, Chris G. Van de Walle · Applied Physics Letters · 2010 · 634 citations

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Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

D. D. Koleske, A. E. Wickenden, R.L. Henry et al. · Journal of Crystal Growth · 2002 · 272 citations

, , +14

Physical Properties of SiC

W. J. Choyke, Gerhard Pensl · MRS Bulletin · 1997 · 261 citations

, , +12

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

Y. Saitoh, Kazuhide Sumiyoshi, Masaya Okada et al. · Applied Physics Express · 2010 · 260 citations

, , +17

Role of carbon in GaN

C. H. Seager, A. F. Wright, Jicheng Yu et al. · Journal of Applied Physics · 2002 · 248 citations

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