Randy P. Tompkins

Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements

C. H. Swartz, Randy P. Tompkins, N. C. Giles et al. · Journal of Crystal Growth · 2004 · 94 citations

Magnetism, Electrical Engineering, Engineering +5

Design and characterization of GaN p-i-n diodes for betavoltaic devices

Muhammad Raziuddin A. Khan, J. Smith, Randy P. Tompkins et al. · Solid-State Electronics · 2017 · 39 citations

Electrical Engineering, Engineering, Applied Physics +4

Fundamental materials studies of undoped, In-doped, and As-doped Hg1−xCdxTe

C. H. Swartz, Randy P. Tompkins, N. C. Giles et al. · Journal of Electronic Materials · 2004 · 32 citations

Materials Science, Fundamental Materials Studies, Ii-vi Semiconductor +3

Molecular beam epitaxy growth of high-quality arsenic-doped HgCdTe

D. D. Edwall, E. C. Piquette, J. Ellsworth et al. · Journal of Electronic Materials · 2004 · 26 citations

High-quality Arsenic-doped Hgcdte, Applied Physics, Molecular Beam Epitaxy +2

DLTS and MCTS analysis of the influence of growth pressure on trap generation in MOCVD GaN

Pankaj B. Shah, R. H. Dedhia, Randy P. Tompkins et al. · Solid-State Electronics · 2012 · 21 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8