Randy P. Tompkins - Concepedia

Author

Randy P. Tompkins

Also Known As

R P Tompkins, R. P. Tompkins, R. Tompkins, R.P. Tompkins, Randy P Tompkins, Randy P. Tompkins, Randy Preston Tompkins, Randy Tompkins

Publications

448

Citations

H-Index

Concepts

All Affiliations

DEVCOM Army Research Laboratory West Virginia University SUNY Polytechnic Institute University at Albany, State University of New York Kyma Technologies (United States)

About

Randy P. Tompkins is an author at DEVCOM Army Research Laboratory specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	15	361
2	Applied Physics	13	16	387
3	Electrical Engineering	10	11	276
4	Chemistry	1	1	21
5	Materials Engineering	1	1	21

Randy P. Tompkins

Publications

387

Citations

H-Index

Page 1

	Year	Citations
Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements C. H. Swartz, Randy P. Tompkins, N. C. Giles, Journal of Crystal Growth MagnetismElectrical EngineeringEngineeringApplied PhysicsMagnetic Measurement	2004	94
Design and characterization of GaN p-i-n diodes for betavoltaic devices Muhammad Raziuddin A. Khan, J. Smith, Randy P. Tompkins, Solid-State Electronics Electrical EngineeringEngineeringApplied PhysicsGan Power DeviceGan P-i-n Diodes	2017	39
Fundamental materials studies of undoped, In-doped, and As-doped Hg1−xCdxTe C. H. Swartz, Randy P. Tompkins, N. C. Giles, Journal of Electronic Materials Materials ScienceFundamental Materials StudiesIi-vi SemiconductorEngineeringApplied Physics	2004	32
Molecular beam epitaxy growth of high-quality arsenic-doped HgCdTe D. D. Edwall, E. C. Piquette, J. Ellsworth, Journal of Electronic Materials High-quality Arsenic-doped HgcdteApplied PhysicsMolecular Beam EpitaxyEpitaxial GrowthCompound Semiconductor	2004	26
DLTS and MCTS analysis of the influence of growth pressure on trap generation in MOCVD GaN Pankaj B. Shah, R. H. Dedhia, Randy P. Tompkins, Solid-State Electronics Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsGrowth Pressure	2012	21
Photoluminescence of ZnTe and ZnTe:Cr grown by molecular-beam epitaxy Ming Luo, Brenda L. VanMil, Randy P. Tompkins, Journal of Applied Physics Optical MaterialsEngineeringLuminescence Decay CurvesOptoelectronic DevicesChemistry	2004	21
Influence of mask material on the electrical properties of selective area epitaxy GaN microstructures Isra Mahaboob, Kasey Hogan, Steven W. Novak, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Wide-bandgap SemiconductorEngineeringSemiconductor MaterialsSimilar DopantElectrical Properties	2018	21
IVT measurements of GaN power Schottky diodes with drift layers grown by HVPE on HVPE GaN substrates Randy P. Tompkins, Mohammad Rezaul Huque Khan, R. Green, Journal of Materials Science Materials in Electronics Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringIvt Measurements	2016	20
The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes Randy P. Tompkins, Timothy A. Walsh, Michael A. Derenge, Journal of materials research/Pratt's guide to venture capital sources Wide-bandgap SemiconductorElectrical EngineeringEngineeringCarbon ImpuritiesApplied Physics	2011	17
Nano-indentation used to study pyramidal slip in GaN single crystals Erez Krimsky, Keith Jones, Randy P. Tompkins, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringMechanical EngineeringGan SamplesMaterials Science	2018	16

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