J. Ellsworth - Concepedia

Author

J. Ellsworth

Sensors (United States)

Also Known As

Ellsworth, J., J. A. Ellsworth, J. Ellsworth, Jon Ellsworth

Publications

455

Citations

H-Index

Concepts

All Affiliations

Sensors (United States)II-VI (United States)Teledyne Technologies (United States)Rockwell Automation (United States)United States Department of the Army

About

J. Ellsworth is an author at Sensors (United States) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	345
2	Applied Physics	8	8	287
3	Electrical Engineering	4	4	123
4	Chemical Engineering	1	1	41
5	Chemistry	1	1	84

J. Ellsworth

Publications

423

Citations

H-Index

Page 1

	Year	Citations
Recipe to minimize Te precipitation in CdTe and (Cd,Zn)Te crystals H. R. Vydyanath, J. Ellsworth, James J. Kennedy, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringCrystal Growth TechnologyChemistryIi-vi SemiconductorQuasichemical Approach	1992	84
Electrical activity, mode of incorporation and distribution coefficient of group V elements in Hg1−xCdxTe grown from tellurium rich liquid phase epitxial growth solutions H. R. Vydyanath, J. Ellsworth, C. Devaney Journal of Electronic Materials Materials ScienceElectrical EngineeringEngineeringCrystal Growth TechnologyDistribution Coefficient	1987	73
Law 19: The ultimate photodiode performance metric Donald L. Lee, P. D. Dreiske, J. Ellsworth,	2020	52
Thermomigration of Te precipitates and improvement of (Cd,Zn)Te substrate characteristics for the fabrication of LWIR (Hg, Cd)Te photodiodes H. R. Vydyanath, J. Ellsworth, John Parkinson, Journal of Electronic Materials Ii-vi SemiconductorChemical EngineeringEngineeringApplied PhysicsTe Substrate Characteristics	1993	41
High-Efficiency Polycrystalline CdS/CdTe Solar Cells on Buffered Commercial TCO-Coated Glass Eric Colegrove, R. E. Banai, C. Blissett, Journal of Electronic Materials Materials ScienceEngineeringOrganic Solar CellApplied PhysicsPlasmon-enhanced Photovoltaics	2012	38
Fundamental materials studies of undoped, In-doped, and As-doped Hg1−xCdxTe C. H. Swartz, Randy P. Tompkins, N. C. Giles, Journal of Electronic Materials Materials ScienceFundamental Materials StudiesIi-vi SemiconductorEngineeringApplied Physics	2004	32
Vapor phase equilibria in the Cd1−xZnxTe alloy system H. R. Vydyanath, J. Ellsworth, R. F. Fisher, Journal of Electronic Materials Materials ScienceMaterials EngineeringIi-vi SemiconductorEngineeringPhase Equilibrium	1993	27
Molecular beam epitaxy growth of high-quality arsenic-doped HgCdTe D. D. Edwall, E. C. Piquette, J. Ellsworth, Journal of Electronic Materials High-quality Arsenic-doped HgcdteApplied PhysicsMolecular Beam EpitaxyEpitaxial GrowthCompound Semiconductor	2004	26
Role of Dislocation Scattering on the Electron Mobility of n-Type Long Wave Length Infrared HgCdTe on Silicon M. Carmody, D. D. Edwall, J. Ellsworth, Journal of Electronic Materials Electrical EngineeringEngineeringPhysicsApplied PhysicsCondensed Matter Physics	2007	24
Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy F. Erdem Arkun, D. D. Edwall, J. Ellsworth, Journal of Electronic Materials Ii-vi SemiconductorElectrical EngineeringEngineeringLarge-area Cdznte SubstratesApplied Physics	2017	15

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