D. D. Edwall

Measurement of isotype heterojunction barriers by <i>C</i>-<i>V</i> profiling

H. Kroemer, Wu-Yi Chien, J. S. Harris et al. · Applied Physics Letters · 1980 · 396 citations

Wide-bandgap Semiconductor, Engineering, Semiconductors +17

High-Operating Temperature HgCdTe: A Vision for the Near Future

D. Lee, M. Carmody, E. C. Piquette et al. · Journal of Electronic Materials · 2016 · 106 citations

Electrical Engineering, Engineering, Temperature Measurement +8

p -type arsenic doping of Hg1−xCdxTe by molecular beam epitaxy

M. Zandian, A. C. Chen, D. D. Edwall et al. · Applied Physics Letters · 1997 · 82 citations

Materials Engineering, Materials Science, Semiconductors +12

A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe IR detectors and focal plane arrays

W. E. Tennant, M. L. Thomas, Lester J. Kozlowski et al. · Journal of Electronic Materials · 2001 · 61 citations

Engineering, Imaging Spectroscopy, Optical Properties +11

Liquid phase epitaxial growth of large area Hg1−<i>x</i>Cd<i>x</i>Te epitaxial layers

D. D. Edwall, E. R. Gertner, W. E. Tennant · Journal of Applied Physics · 1984 · 59 citations

Materials Science, Materials Engineering, Electrical Engineering +13