E. R. Gertner

<i>p</i>-type arsenic doping of CdTe and HgTe/CdTe superlattices grown by photoassisted and conventional molecular-beam epitaxy

J. M. Arias, S. H. Shin, Donald E. Cooper et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1990 · 78 citations

Materials Science, Semiconductors, Ii-vi Semiconductor +14

Long and middle wavelength infrared photodiodes fabricated with Hg1−<i>x</i> Cd<i>x</i>Te grown by molecular-beam epitaxy

J. M. Arias, S. H. Shin, J. G. Pasko et al. · Journal of Applied Physics · 1989 · 70 citations

Optical Materials, Engineering, Optoelectronic Devices +22

Backside-illuminated InAsSb/GaSb broadband detectors

L. O. Bubulac, A. M. Andrews, E. R. Gertner et al. · Applied Physics Letters · 1980 · 69 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +18

Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors

B. T. McDermott, E. R. Gertner, S. Pittman et al. · Applied Physics Letters · 1996 · 64 citations

Materials Science, Semiconductors, Electrical Engineering +10

Liquid phase epitaxial growth of large area Hg1−<i>x</i>Cd<i>x</i>Te epitaxial layers

D. D. Edwall, E. R. Gertner, W. E. Tennant · Journal of Applied Physics · 1984 · 59 citations

Materials Science, Materials Engineering, Electrical Engineering +13