E. R. Gertner - Concepedia

Author

E. R. Gertner

Rockwell Automation (United States)

Also Known As

E R Gertner, E. GERTNER, E. Gertner, E. R. Gertner, E.R. Gertner, Ed Gertner

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

Rockwell Automation (United States)Space Micro (United States)Jet Propulsion Laboratory

About

E. R. Gertner is an author at Rockwell Automation (United States) specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	38	1.2K
2	Applied Physics	23	37	1.2K
3	Chemistry	4	4	101
4	Natural Sciences	2	2	105
5	Chemical Engineering	1	1	31

E. R. Gertner

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
<i>p</i>-type arsenic doping of CdTe and HgTe/CdTe superlattices grown by photoassisted and conventional molecular-beam epitaxy J. M. Arias, S. H. Shin, Donald E. Cooper, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceSemiconductorsIi-vi SemiconductorOptical MaterialsEngineering	1990	78
Long and middle wavelength infrared photodiodes fabricated with Hg1−<i>x</i> Cd<i>x</i>Te grown by molecular-beam epitaxy J. M. Arias, S. H. Shin, J. G. Pasko, Journal of Applied Physics Optical MaterialsEngineeringOptoelectronic DevicesCutoff WavelengthSemiconductors	1989	70
Backside-illuminated InAsSb/GaSb broadband detectors L. O. Bubulac, A. M. Andrews, E. R. Gertner, Applied Physics Letters Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesSemiconductorsElectronic Devices	1980	69
Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors B. T. McDermott, E. R. Gertner, S. Pittman, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringCarbon-doped Gaassb BaseEngineering	1996	64
Liquid phase epitaxial growth of large area Hg1−<i>x</i>Cd<i>x</i>Te epitaxial layers D. D. Edwall, E. R. Gertner, W. E. Tennant Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringOptical MaterialsEngineering	1984	59
Improved surface quality of solution grown GaAs and Pb1−xSnxTe epitaxial layers: A new technique J.T. Longo, J. S. Harris, E. R. Gertner, Journal of Crystal Growth Materials ScienceMaterials EngineeringSemiconductor TechnologyEpitaxial GrowthEngineering	1972	54
Backside-illuminated InAs1−<i>x</i>Sb<i>x</i>-InAs narrow-band photodetectors D. T. Cheung, A. M. Andrews, E. R. Gertner, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringHigh-performance Backside-illuminated PhotodiodesOptoelectronic Devices	1977	52
The Pb-Sn-Te phase diagram and its application to the liquid phase epitaxial growth of Pb1−xSnxTe J. S. Harris, J.T. Longo, E. R. Gertner, Journal of Crystal Growth Materials ScienceEngineeringCrystal Growth TechnologyApplied PhysicsCondensed Matter Physics	1975	50
Low-Field de Haas-van Alphen Effect in Copper A. S. Joseph, A. C. Thorsen, E. R. Gertner, Physical Review	1966	50
256*256 hybrid HgCdTe infrared focal plane arrays Robert B. Bailey, Lester J. Kozlowski, J. Chen, IEEE Transactions on Electron Devices PhotonicsElectrical EngineeringOptical MaterialsEngineeringInfrared Sensor	1991	41

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