J. G. Pasko

Planar <i>p</i>-on-<i>n</i> HgCdTe heterostructure photovoltaic detectors

J. M. Arias, J. G. Pasko, M. Zandian et al. · Applied Physics Letters · 1993 · 96 citations

Engineering, Electrical Engineering, Materials Science +17

p -type arsenic doping of Hg1−xCdxTe by molecular beam epitaxy

M. Zandian, A. C. Chen, D. D. Edwall et al. · Applied Physics Letters · 1997 · 82 citations

Engineering, Materials Engineering, Materials Science +15

<i>p</i>-type arsenic doping of CdTe and HgTe/CdTe superlattices grown by photoassisted and conventional molecular-beam epitaxy

J. M. Arias, S. H. Shin, Donald E. Cooper et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1990 · 78 citations

Engineering, Materials Engineering, Materials Science +16

Long and middle wavelength infrared photodiodes fabricated with Hg1−<i>x</i> Cd<i>x</i>Te grown by molecular-beam epitaxy

J. M. Arias, S. H. Shin, J. G. Pasko et al. · Journal of Applied Physics · 1989 · 70 citations

Engineering, Materials Engineering, Materials Science +17

Bias-switchable dual-band HgCdTe infrared photodetector

E. R. Blazejewski, J. M. Arias, Gail Williams et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 66 citations

Engineering, Electrical Engineering, Materials Science +17