J. M. Arias

Planar <i>p</i>-on-<i>n</i> HgCdTe heterostructure photovoltaic detectors

J. M. Arias, J. G. Pasko, M. Zandian et al. · Applied Physics Letters · 1993 · 95 citations

Planar Hg1−ycdyte/hg1−xcdxte, Optical Materials, Engineering +18

p -type arsenic doping of Hg1−xCdxTe by molecular beam epitaxy

M. Zandian, A. C. Chen, D. D. Edwall et al. · Applied Physics Letters · 1997 · 82 citations

Materials Engineering, Materials Science, Semiconductors +12

<i>p</i>-type arsenic doping of CdTe and HgTe/CdTe superlattices grown by photoassisted and conventional molecular-beam epitaxy

J. M. Arias, S. H. Shin, Donald E. Cooper et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1990 · 78 citations

Materials Science, Semiconductors, Ii-vi Semiconductor +14

HgCdTe infrared diode lasers grown by MBE

J. M. Arias, M. Zandian, R. Zucca et al. · Semiconductor Science and Technology · 1993 · 78 citations

Materials Science, Electrical Engineering, Engineering +9

Long and middle wavelength infrared photodiodes fabricated with Hg1−<i>x</i> Cd<i>x</i>Te grown by molecular-beam epitaxy

J. M. Arias, S. H. Shin, J. G. Pasko et al. · Journal of Applied Physics · 1989 · 70 citations

Optical Materials, Engineering, Optoelectronic Devices +22