Publication | Closed Access
DLTS and MCTS analysis of the influence of growth pressure on trap generation in MOCVD GaN
21
Citations
30
References
2012
Year
Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsGrowth PressureAluminum Gallium NitrideGan Power DeviceMcts AnalysisMicroelectronicsCategoryiii-v SemiconductorMocvd Gan
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