K. W. Kirchner - Concepedia

Author

K. W. Kirchner

Also Known As

K W Kirchner, K. Kirchner, K. W. Kirchner, K.W Kirchner, K.W. Kirchner, Keith Kirchner, Kevin Kirchner, Kevin W. Kirchner, Kirchner, K.

Publications

488

Citations

H-Index

Concepts

All Affiliations

DEVCOM Army Research Laboratory University of Maryland, College Park University at Albany, State University of New York Oak Ridge National Laboratory Kyma Technologies (United States)

About

K. W. Kirchner is an author at DEVCOM Army Research Laboratory specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	332
2	Applied Physics	11	12	332
3	Electrical Engineering	6	6	95
4	Materials Engineering	4	4	72
5	Chemistry	2	2	221

K. W. Kirchner

Publications

432

Citations

H-Index

Page 1

	Year	Citations
Alkoxy sol-gel derived Y3−xAl5O12:Tbx thin films as efficient cathodoluminescent phosphors Jae Young Choe, D. Ravichandran, S. Blomquist, Applied Physics Letters Crystallized FilmSol-gel ChemistryOptical MaterialsEngineeringLuminescent Glass	2001	121
Cathodoluminescence study of novel sol–gel derived Y3−xAl5O12:Tbx phosphors Jae Young Choe, D. Ravichandran, S. Blomquist, Journal of Luminescence Functional MaterialsChemistryLuminescence PropertyCathodoluminescence StudySol-gel Synthesis	2001	100
High critical current density in epitaxial HgBa2CaCu2OX thin films S.L. Yan, Y. Y. Xie, Judy Wu, Applied Physics Letters Materials ScienceSuperconducting MaterialHigh-tc SuperconductivityEngineeringHigh Quality	1998	53
Annealing ion implanted SiC with an AlN cap Keith Jones, Pankaj B. Shah, K. W. Kirchner, Materials Science and Engineering B Materials EngineeringMaterials ScienceIon ImplantationEngineeringAln Cap	1999	24
Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC Laura B. Ruppalt, S.S. Stafford, Dongsheng Yuan, Solid-State Electronics Materials ScienceMaterials EngineeringElectrical EngineeringIon ImplantationEngineering	2002	21
The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes Randy P. Tompkins, Timothy A. Walsh, Michael A. Derenge, Journal of materials research/Pratt's guide to venture capital sources Wide-bandgap SemiconductorElectrical EngineeringEngineeringCarbon ImpuritiesApplied Physics	2011	17
Enhanced-response pyroelectric heterostructures C. W. Tipton, K. W. Kirchner, R. P. Godfrey, Applied Physics Letters Materials ScienceMultiferroicsElectrical EngineeringEngineeringElectronic Materials	2000	16
HVPE GaN for high power electronic Schottky diodes Randy P. Tompkins, Timothy A. Walsh, Michael A. Derenge, Solid-State Electronics Electrical EngineeringEngineeringApplied PhysicsPower Semiconductor DeviceGan Power Device	2012	15
A comparison of the AlN annealing cap for 4H–SiC annealed in nitrogen versus argon atmosphere Michael A. Derenge, Keith Jones, K. W. Kirchner, Solid-State Electronics Materials ScienceMaterials EngineeringEngineeringApplied PhysicsCarbide	2004	15
GaN Power Schottky Diodes with Drift Layers Grown on Four Substrates Randy P. Tompkins, J. Smith, K. W. Kirchner, Journal of Electronic Materials Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringDrift Layers GrownEngineering	2014	14

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